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III-V device integration on Si using template-assisted selective epitaxy

Schmid, Heinz; Borg, Mattias LU ; Moselund, Kirsten; Gignac, Lynne; Breslin, Chris; Bruley, John; Cutaia, Davide and Riel, Heike (2015) 73rd Annual Device Research Conference, DRC 2015 In Device Research Conference - Conference Digest, DRC 2015-August. p.255-256
Abstract

High mobility (III-V) materials have long been anticipated to replace Si MOSFETs. But only recently [1] were scaled InAs MOSFETs reported to outperform Si devices. However, high-performing III-V devices are typically fabricated on InP substrates which are not compatible with large-scale chip manufacturing. While various III-V on Si fabrication approaches have been reported to overcome this issue, they either suffer from limited material quality or are economically not competitive compared to Si substrates. Here we demonstrate a versatile approach for heterogeneous integration of III-Vs on Si and validate this by the fabrication of multiple-gate (MuG)-FET devices. The study is complemented by performing TEM analysis, TLM and Hall... (More)

High mobility (III-V) materials have long been anticipated to replace Si MOSFETs. But only recently [1] were scaled InAs MOSFETs reported to outperform Si devices. However, high-performing III-V devices are typically fabricated on InP substrates which are not compatible with large-scale chip manufacturing. While various III-V on Si fabrication approaches have been reported to overcome this issue, they either suffer from limited material quality or are economically not competitive compared to Si substrates. Here we demonstrate a versatile approach for heterogeneous integration of III-Vs on Si and validate this by the fabrication of multiple-gate (MuG)-FET devices. The study is complemented by performing TEM analysis, TLM and Hall measurements.

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Please use this url to cite or link to this publication:
author
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Epitaxial growth
in
Device Research Conference - Conference Digest, DRC
volume
2015-August
pages
2 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
73rd Annual Device Research Conference, DRC 2015
external identifiers
  • Scopus:84957666166
ISBN
9781467381345
DOI
10.1109/DRC.2015.7175666
language
English
LU publication?
no
id
1ac607c6-6cf0-4020-8780-1330c576a656
date added to LUP
2016-04-20 10:28:05
date last changed
2016-06-29 13:56:50
@misc{1ac607c6-6cf0-4020-8780-1330c576a656,
  abstract     = {<p>High mobility (III-V) materials have long been anticipated to replace Si MOSFETs. But only recently [1] were scaled InAs MOSFETs reported to outperform Si devices. However, high-performing III-V devices are typically fabricated on InP substrates which are not compatible with large-scale chip manufacturing. While various III-V on Si fabrication approaches have been reported to overcome this issue, they either suffer from limited material quality or are economically not competitive compared to Si substrates. Here we demonstrate a versatile approach for heterogeneous integration of III-Vs on Si and validate this by the fabrication of multiple-gate (MuG)-FET devices. The study is complemented by performing TEM analysis, TLM and Hall measurements.</p>},
  author       = {Schmid, Heinz and Borg, Mattias and Moselund, Kirsten and Gignac, Lynne and Breslin, Chris and Bruley, John and Cutaia, Davide and Riel, Heike},
  isbn         = {9781467381345},
  keyword      = {Epitaxial growth},
  language     = {eng},
  month        = {08},
  pages        = {255--256},
  publisher    = {ARRAY(0xa288750)},
  series       = {Device Research Conference - Conference Digest, DRC},
  title        = {III-V device integration on Si using template-assisted selective epitaxy},
  url          = {http://dx.doi.org/10.1109/DRC.2015.7175666},
  volume       = {2015-August},
  year         = {2015},
}