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Assembling Ferromagnetic Single-electron Transistors with Atomic Force Microscopy

Pettersson, H.; Liu, Ruisheng LU ; Suyatin, Dmitry LU and Samuelson, Lars LU (2008) In Nanostructures in electronics and photonics p.29-40
Abstract
Ferromagnetic Single Electron Transistors (F-SETs) comprise ferromagnetic electrodes connected to a ferromagnetic- or non-magnetic central island via tunnel barriers. These devices are important for studies of spin-transport physics in confined structures. Here we describe the development of a novel type of AFM-assembled nano-scale F-SETs suitable for spin-transport investigations at temperatures above 4.2 K. The ingenious fabrication technique means that their electrical characteristics can be tuned in real-time during the fabrication sequence by re-positioning the central island with Ångström precision.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
Nanostructures in electronics and photonics
editor
Rahman, Faiz
pages
29 - 40
publisher
Pan Stanford Publishing Pte. Ltd., Penthouse Level, Suntec Tower 3, 8 Temasek Boulevard, Singapore 038988
external identifiers
  • Scopus:84880187788
ISBN
978-981-4241-10-6
language
English
LU publication?
yes
id
269cb000-63b3-4596-94fa-a30e83124f23 (old id 2060537)
date added to LUP
2011-08-16 12:14:29
date last changed
2016-10-13 04:39:32
@misc{269cb000-63b3-4596-94fa-a30e83124f23,
  abstract     = {Ferromagnetic Single Electron Transistors (F-SETs) comprise ferromagnetic electrodes connected to a ferromagnetic- or non-magnetic central island via tunnel barriers. These devices are important for studies of spin-transport physics in confined structures. Here we describe the development of a novel type of AFM-assembled nano-scale F-SETs suitable for spin-transport investigations at temperatures above 4.2 K. The ingenious fabrication technique means that their electrical characteristics can be tuned in real-time during the fabrication sequence by re-positioning the central island with Ångström precision.},
  author       = {Pettersson, H. and Liu, Ruisheng and Suyatin, Dmitry and Samuelson, Lars},
  editor       = {Rahman, Faiz},
  isbn         = {978-981-4241-10-6},
  language     = {eng},
  pages        = {29--40},
  publisher    = {ARRAY(0x7e2abb8)},
  series       = {Nanostructures in electronics and photonics},
  title        = {Assembling Ferromagnetic Single-electron Transistors with Atomic Force Microscopy},
  year         = {2008},
}