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Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process

Li, Kan; Pan, Wei; Wang, Jingyun; Pan, Huayong; Huang, Shaoyun; Xing, Yingjie and Xu, H. Q. LU (2016) In Nanoscale Research Letters 11(1).
Abstract

We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in a commonly used tube furnace setup. The approach employs a process of stable heating at a high temperature and then cooling down naturally to room temperature with the nanowire growth occurred effectively during the naturally cooling step. As-grown nanowires are analyzed using a scanning electron microscope and a transmission electron microscope equipped with an energy-dispersive X-ray spectroscopy setup. It is shown that the grown nanowires are several micrometers in lengths and are zincblende InSb and GaSb crystals. The FET devices are also fabricated with the grown nanowires and investigated. It is shown that the grown nanowires show... (More)

We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in a commonly used tube furnace setup. The approach employs a process of stable heating at a high temperature and then cooling down naturally to room temperature with the nanowire growth occurred effectively during the naturally cooling step. As-grown nanowires are analyzed using a scanning electron microscope and a transmission electron microscope equipped with an energy-dispersive X-ray spectroscopy setup. It is shown that the grown nanowires are several micrometers in lengths and are zincblende InSb and GaSb crystals. The FET devices are also fabricated with the grown nanowires and investigated. It is shown that the grown nanowires show good, desired electrical properties and should have potential applications in the future nanoelectronics and infrared optoelectronics.

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Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Chemical vapor deposition, Naturally cooling growth, VLS mechanism
in
Nanoscale Research Letters
volume
11
issue
1
publisher
Springer
external identifiers
  • Scopus:84964786393
ISSN
1931-7573
DOI
10.1186/s11671-016-1443-4
language
English
LU publication?
yes
id
210e63d3-a6ec-4e89-a956-91e15759f7d7
date added to LUP
2016-05-19 13:02:00
date last changed
2016-10-17 09:23:51
@misc{210e63d3-a6ec-4e89-a956-91e15759f7d7,
  abstract     = {<p>We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in a commonly used tube furnace setup. The approach employs a process of stable heating at a high temperature and then cooling down naturally to room temperature with the nanowire growth occurred effectively during the naturally cooling step. As-grown nanowires are analyzed using a scanning electron microscope and a transmission electron microscope equipped with an energy-dispersive X-ray spectroscopy setup. It is shown that the grown nanowires are several micrometers in lengths and are zincblende InSb and GaSb crystals. The FET devices are also fabricated with the grown nanowires and investigated. It is shown that the grown nanowires show good, desired electrical properties and should have potential applications in the future nanoelectronics and infrared optoelectronics.</p>},
  author       = {Li, Kan and Pan, Wei and Wang, Jingyun and Pan, Huayong and Huang, Shaoyun and Xing, Yingjie and Xu, H. Q.},
  issn         = {1931-7573},
  keyword      = {Chemical vapor deposition,Naturally cooling growth,VLS mechanism},
  language     = {eng},
  month        = {12},
  number       = {1},
  publisher    = {ARRAY(0x8034818)},
  series       = {Nanoscale Research Letters},
  title        = {Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process},
  url          = {http://dx.doi.org/10.1186/s11671-016-1443-4},
  volume       = {11},
  year         = {2016},
}