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Epitaxial silicide formation in the Mg/Si(111) system

Wigren, C.; Andersen, J. N. LU ; Nyholm, R. LU and Karlsson, U. O. (1993) In Surface Science 289(3). p.290-296
Abstract

The silicide formation has been studied in the Mg/Si(111) system by low energy electron diffraction (LEED) and photoelectron spectroscopy. It has been found that an epitaxial Mg2Si silicide is responsible for the ( 2 3√3 × 2 3√3)R30° reconstru system. The thickness of the silicide is limited due to the very low formation temperature for this silicide. The Fermi level is positioned 0.59 ± 0.06 eV above the valence band maximum in the Si substrate and the valence band maximum in the epitaxial silicide is positioned 0.3 ± 0.1 eV below the Fermi level. © 1993.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Surface Science
volume
289
issue
3
pages
7 pages
publisher
Elsevier
external identifiers
  • Scopus:0027609487
ISSN
0039-6028
DOI
10.1016/0039-6028(93)90661-3
language
English
LU publication?
yes
id
23d4cb26-e860-43e4-ae8e-72b06a5e0468
date added to LUP
2016-04-29 11:22:02
date last changed
2016-05-17 10:51:15
@misc{23d4cb26-e860-43e4-ae8e-72b06a5e0468,
  abstract     = {<p>The silicide formation has been studied in the Mg/Si(111) system by low energy electron diffraction (LEED) and photoelectron spectroscopy. It has been found that an epitaxial Mg<sub>2</sub>Si silicide is responsible for the ( 2 3√3 × 2 3√3)R30° reconstru system. The thickness of the silicide is limited due to the very low formation temperature for this silicide. The Fermi level is positioned 0.59 ± 0.06 eV above the valence band maximum in the Si substrate and the valence band maximum in the epitaxial silicide is positioned 0.3 ± 0.1 eV below the Fermi level. © 1993.</p>},
  author       = {Wigren, C. and Andersen, J. N. and Nyholm, R. and Karlsson, U. O.},
  issn         = {0039-6028},
  language     = {eng},
  month        = {06},
  number       = {3},
  pages        = {290--296},
  publisher    = {ARRAY(0x7d021f8)},
  series       = {Surface Science},
  title        = {Epitaxial silicide formation in the Mg/Si(111) system},
  url          = {http://dx.doi.org/10.1016/0039-6028(93)90661-3},
  volume       = {289},
  year         = {1993},
}