MOVPE Growth and Characterization of Low-Dimensional III-V Semiconductor Structures
(1998)- Abstract
- Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. Results obtained for GaAs/GaInP quantum wells are compared to the more thoroughly investigated GaInAs/InP material combination. The potential of using a strain induced transition from a 2-dimensional layer-by-layer growth mode, towards 3-dimensional island growth, for generation of self-assembled quantum dots is demonstrated for the highly strained InP/GaInP and InAs/InP heterocombinations. Self-assembled dots of InP can also be formed on a GaAs substrate for a wide range of growth rates... (More)
- Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. Results obtained for GaAs/GaInP quantum wells are compared to the more thoroughly investigated GaInAs/InP material combination. The potential of using a strain induced transition from a 2-dimensional layer-by-layer growth mode, towards 3-dimensional island growth, for generation of self-assembled quantum dots is demonstrated for the highly strained InP/GaInP and InAs/InP heterocombinations. Self-assembled dots of InP can also be formed on a GaAs substrate for a wide range of growth rates and growth temperatures. Characterization by atomic force microscopy shows that the initial nucleation of self-assembled dots strongly depends on the growth rate and the growth temperature, resulting in a variable surface density of dots, as well as a variable dot size. Growth of modulation doped GaInAs/InP quantum wells at growth conditions previously optimized with respect to narrow line-widths in photoluminescence, results in an extremely high electron mobility, allowing detailed studies of the most prominent low-temperature scattering mechanisms. By etch-and-regrowth of a modulation doped GaInAs/InP quantum well structure, the formation of a quantum point contact is demonstrated. The quantum point contact exhibits a characteristic quantized conductance up to 10 K. After the initial optimization of the growth conditions with respect to photoluminescence properties of narrow GaAs/GaInP quantum wells, electron tunneling in GaAs/GaInP double-barrier resonant tunneling diodes is demonstrated. The active areas of the diodes can be scaled by the insertion of an array of embedded W discs in the upper GaAs cap layer. Vacant positions in the W disc array define the vertical current channel, while the areas without vacancies are semi-insulating due to an overlapping Schottky depletion from the W disc array. (Less)
- Abstract (Swedish)
- Popular Abstract in Swedish
Med hjälp av tekniker för att deponera enkristallina material i ytterst tunna skikt kan lågdimensionella strukturer i exempelvis halvledarmaterial åstadkommas. Karakteristiskt för lågdimensionella strukturer är att tjockleken hos enskilda skikt ligger i samma storleksordning som elektronernas de-Broglie våglängd. Som en följd av detta kan tydliga kvantmekaniska fenomen påvisas i lågdimensionella strukturer. I avhandlingen beskrivs egenskaperna hos lågdimensionella strukturer i valda III-V halvledarmaterial, tillverkade med metallorganisk gasfasepitaxi. Många III-V halvledare har, på grund av materialets elektroniska egenskaper, förmåga att utsända ljus vid exempelvis optisk excitation. Genom... (More) - Popular Abstract in Swedish
Med hjälp av tekniker för att deponera enkristallina material i ytterst tunna skikt kan lågdimensionella strukturer i exempelvis halvledarmaterial åstadkommas. Karakteristiskt för lågdimensionella strukturer är att tjockleken hos enskilda skikt ligger i samma storleksordning som elektronernas de-Broglie våglängd. Som en följd av detta kan tydliga kvantmekaniska fenomen påvisas i lågdimensionella strukturer. I avhandlingen beskrivs egenskaperna hos lågdimensionella strukturer i valda III-V halvledarmaterial, tillverkade med metallorganisk gasfasepitaxi. Många III-V halvledare har, på grund av materialets elektroniska egenskaper, förmåga att utsända ljus vid exempelvis optisk excitation. Genom fotoluminescens-spektroskopi kan därför kvantiseringsenergier i lågdimensionella strukturer bestämmas. I arbetet har också ingått att karakterisera ytstrukturer med hjälp av atomkraftsmikroskopi samt undersökningar av hur elektroner i lågdimensionella strukturer hos vissa typiska material uppför sig under påverkan av elektriska eller magnetiska fält. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/38663
- author
- Carlsson, Niclas LU
- supervisor
- opponent
-
- Dr Scholz, Ferdinand, Universität Stuttgart
- organization
- publishing date
- 1998
- type
- Thesis
- publication status
- published
- subject
- keywords
- Semiconductory physics, low-dimensional structures, metalorganic vapour phase epitaxy, quantum wells, self-assembled dots, quantum dots, Fysicumarkivet A:1998:Carlsson, Halvledarfysik
- pages
- 156 pages
- publisher
- Solid State Physics, Lund University
- defense location
- Lecture Hall B, Department of Physics
- defense date
- 1998-05-08 10:15:00
- external identifiers
-
- other:ISRN: LUFTD2/(TFFF-0050)/1-156
- ISBN
- 91-628-2937-8
- language
- English
- LU publication?
- yes
- id
- 28226f60-8cfa-4dd6-a21a-d0df3d18012b (old id 38663)
- date added to LUP
- 2016-04-04 11:00:40
- date last changed
- 2018-11-21 21:02:07
@phdthesis{28226f60-8cfa-4dd6-a21a-d0df3d18012b,
abstract = {{Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. Results obtained for GaAs/GaInP quantum wells are compared to the more thoroughly investigated GaInAs/InP material combination. The potential of using a strain induced transition from a 2-dimensional layer-by-layer growth mode, towards 3-dimensional island growth, for generation of self-assembled quantum dots is demonstrated for the highly strained InP/GaInP and InAs/InP heterocombinations. Self-assembled dots of InP can also be formed on a GaAs substrate for a wide range of growth rates and growth temperatures. Characterization by atomic force microscopy shows that the initial nucleation of self-assembled dots strongly depends on the growth rate and the growth temperature, resulting in a variable surface density of dots, as well as a variable dot size. Growth of modulation doped GaInAs/InP quantum wells at growth conditions previously optimized with respect to narrow line-widths in photoluminescence, results in an extremely high electron mobility, allowing detailed studies of the most prominent low-temperature scattering mechanisms. By etch-and-regrowth of a modulation doped GaInAs/InP quantum well structure, the formation of a quantum point contact is demonstrated. The quantum point contact exhibits a characteristic quantized conductance up to 10 K. After the initial optimization of the growth conditions with respect to photoluminescence properties of narrow GaAs/GaInP quantum wells, electron tunneling in GaAs/GaInP double-barrier resonant tunneling diodes is demonstrated. The active areas of the diodes can be scaled by the insertion of an array of embedded W discs in the upper GaAs cap layer. Vacant positions in the W disc array define the vertical current channel, while the areas without vacancies are semi-insulating due to an overlapping Schottky depletion from the W disc array.}},
author = {{Carlsson, Niclas}},
isbn = {{91-628-2937-8}},
keywords = {{Semiconductory physics; low-dimensional structures; metalorganic vapour phase epitaxy; quantum wells; self-assembled dots; quantum dots; Fysicumarkivet A:1998:Carlsson; Halvledarfysik}},
language = {{eng}},
publisher = {{Solid State Physics, Lund University}},
school = {{Lund University}},
title = {{MOVPE Growth and Characterization of Low-Dimensional III-V Semiconductor Structures}},
year = {{1998}},
}