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A Class-AB 1.65GHz-2GHz Broadband CMOS Medium Power Amplifier

Aniktar, H; Sjöland, Henrik LU ; H, Mikkelsen, J and Larsen, T (2005) NORCHIP Conference, 2005 In Proceedings of Norchip 2005
Abstract
In this paper a single stage broadband CMOS RF power

amplifier is presented. The power amplifier is fabricated in

a 0:25¹m CMOS process. Measurements with a 2:5V supply

voltage show an output power of 18:5 dBm with an associated

PAE of 16% at the 1-dB compression point. The measured

gain is 5.1 § 0:5 dB from 1.65 to 2 GHz. Simulated

and measured results agree reasonably well.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
Proceedings of Norchip 2005
conference name
NORCHIP Conference, 2005
external identifiers
  • Scopus:33847202912
language
English
LU publication?
yes
id
9aa2b666-d5f3-40cf-b873-fd355b7f33e4 (old id 603176)
alternative location
http://ieeexplore.ieee.org/iel5/10643/33584/01597041.pdf?isnumber=33584&arnumber=1597041
date added to LUP
2007-11-19 13:48:22
date last changed
2016-10-13 04:59:05
@misc{9aa2b666-d5f3-40cf-b873-fd355b7f33e4,
  abstract     = {In this paper a single stage broadband CMOS RF power<br/><br>
amplifier is presented. The power amplifier is fabricated in<br/><br>
a 0:25¹m CMOS process. Measurements with a 2:5V supply<br/><br>
voltage show an output power of 18:5 dBm with an associated<br/><br>
PAE of 16% at the 1-dB compression point. The measured<br/><br>
gain is 5.1 § 0:5 dB from 1.65 to 2 GHz. Simulated<br/><br>
and measured results agree reasonably well.},
  author       = {Aniktar, H and Sjöland, Henrik and H, Mikkelsen, J and Larsen, T},
  language     = {eng},
  series       = {Proceedings of Norchip 2005},
  title        = {A Class-AB 1.65GHz-2GHz Broadband CMOS Medium Power Amplifier},
  year         = {2005},
}