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Nanoimprint in mr-L 6000.1 XP/PMMA resist system

Carlberg, Patrick LU ; Beck, Marc LU ; Graczyk, Mariusz LU ; Maximov, Ivan LU ; Sarwe, Eva-Lena LU ; Montelius, Lars LU ; Pfeiffer, K.; Reuther, F. and Gruetzner, G. (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) In 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Abstract
Use of the new resist system mr-L 6000.1 XP in combination with PMMA is demonstrated to give sub-100 nm resolution in nanoimprint lithography. Low glass transition temperature in combination with high plasma stability makes this resist suitable for achieving desirable resist profiles after the imprint process. Imprint conditions for mr-L 6000.1 XP/PMMA resist system as well as imprint results are described and discussed
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
resist profiles, plasma stability, glass transition temperature, nanoimprint lithography, XP/PMMA resist system, 100 nm, SEM, scanning electron microscopy
in
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
language
English
LU publication?
yes
id
e26b4275-cabf-4469-aa20-33bda7fad2a3 (old id 610475)
date added to LUP
2007-11-27 10:55:07
date last changed
2016-04-16 09:19:10
@misc{e26b4275-cabf-4469-aa20-33bda7fad2a3,
  abstract     = {Use of the new resist system mr-L 6000.1 XP in combination with PMMA is demonstrated to give sub-100 nm resolution in nanoimprint lithography. Low glass transition temperature in combination with high plasma stability makes this resist suitable for achieving desirable resist profiles after the imprint process. Imprint conditions for mr-L 6000.1 XP/PMMA resist system as well as imprint results are described and discussed},
  author       = {Carlberg, Patrick and Beck, Marc and Graczyk, Mariusz and Maximov, Ivan and Sarwe, Eva-Lena and Montelius, Lars and Pfeiffer, K. and Reuther, F. and Gruetzner, G.},
  keyword      = {resist profiles,plasma stability,glass transition temperature,nanoimprint lithography,XP/PMMA resist system,100 nm,SEM,scanning electron microscopy},
  language     = {eng},
  pages        = {2},
  publisher    = {ARRAY(0x989b488)},
  series       = {7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science},
  title        = {Nanoimprint in mr-L 6000.1 XP/PMMA resist system},
  year         = {2002},
}