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Oxidation and reduction behaviour of Ge/Si islands

Zela, Vilma LU ; Sass, T.; Gustafsson, Anders LU ; Pietzonka, I. and Seifert, Werner LU (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) In 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Abstract
We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H<sub>2</sub>O in N<sub>2</sub>. The reduction was done in H<sub>2</sub>, which at T<800 °C selectively reduces GeO<sub>2</sub> only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial... (More)
We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H<sub>2</sub>O in N<sub>2</sub>. The reduction was done in H<sub>2</sub>, which at T<800 °C selectively reduces GeO<sub>2</sub> only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial relationship to the underlying Si substrate. These structures are therefore of potential interest for lateral epitaxial overgrowth of the SiO<sub>2</sub> by Ge, using the reduced Ge dots as the seeds for epitaxy (Less)
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author
organization
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type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Si, 620 degC, Ge, lateral epitaxial overgrowth, Si substrate, phase segregated Ge enrichments, selective reduction, high resolution transmission electron microscopy, UHV-CVD, dome shaped three dimensional islands, Ge/Si islands, reduction behaviour, oxidation behaviour
in
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
language
English
LU publication?
yes
id
db11ba0b-2569-41c1-ab8f-2cf1eac0180d (old id 611514)
date added to LUP
2007-11-29 13:19:37
date last changed
2016-04-16 08:28:45
@misc{db11ba0b-2569-41c1-ab8f-2cf1eac0180d,
  abstract     = {We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H&lt;sub&gt;2&lt;/sub&gt;O in N&lt;sub&gt;2&lt;/sub&gt;. The reduction was done in H&lt;sub&gt;2&lt;/sub&gt;, which at T&lt;800 °C selectively reduces GeO&lt;sub&gt;2&lt;/sub&gt; only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial relationship to the underlying Si substrate. These structures are therefore of potential interest for lateral epitaxial overgrowth of the SiO&lt;sub&gt;2&lt;/sub&gt; by Ge, using the reduced Ge dots as the seeds for epitaxy},
  author       = {Zela, Vilma and Sass, T. and Gustafsson, Anders and Pietzonka, I. and Seifert, Werner},
  keyword      = {Si,620 degC,Ge,lateral epitaxial overgrowth,Si substrate,phase segregated Ge enrichments,selective reduction,high resolution transmission electron microscopy,UHV-CVD,dome shaped three dimensional islands,Ge/Si islands,reduction behaviour,oxidation behaviour},
  language     = {eng},
  pages        = {2},
  publisher    = {ARRAY(0xa48b100)},
  series       = {7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science},
  title        = {Oxidation and reduction behaviour of Ge/Si islands},
  year         = {2002},
}