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Oxidation and reduction behaviour of Ge/Si islands

Zela, Vilma LU ; Sass, T. ; Gustafsson, Anders LU orcid ; Pietzonka, I. and Seifert, Werner LU (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Abstract
We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H<sub>2</sub>O in N<sub>2</sub>. The reduction was done in H<sub>2</sub>, which at T<800 °C selectively reduces GeO<sub>2</sub> only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial... (More)
We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H<sub>2</sub>O in N<sub>2</sub>. The reduction was done in H<sub>2</sub>, which at T<800 °C selectively reduces GeO<sub>2</sub> only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial relationship to the underlying Si substrate. These structures are therefore of potential interest for lateral epitaxial overgrowth of the SiO<sub>2</sub> by Ge, using the reduced Ge dots as the seeds for epitaxy (Less)
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author
; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Si, 620 degC, Ge, lateral epitaxial overgrowth, Si substrate, phase segregated Ge enrichments, selective reduction, high resolution transmission electron microscopy, UHV-CVD, dome shaped three dimensional islands, Ge/Si islands, reduction behaviour, oxidation behaviour
host publication
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
conference location
Malmö, Sweden
conference dates
2002-06-24 - 2002-06-28
language
English
LU publication?
yes
id
db11ba0b-2569-41c1-ab8f-2cf1eac0180d (old id 611514)
date added to LUP
2016-04-04 10:52:27
date last changed
2018-11-21 21:01:17
@inproceedings{db11ba0b-2569-41c1-ab8f-2cf1eac0180d,
  abstract     = {{We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H&lt;sub&gt;2&lt;/sub&gt;O in N&lt;sub&gt;2&lt;/sub&gt;. The reduction was done in H&lt;sub&gt;2&lt;/sub&gt;, which at T&lt;800 °C selectively reduces GeO&lt;sub&gt;2&lt;/sub&gt; only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial relationship to the underlying Si substrate. These structures are therefore of potential interest for lateral epitaxial overgrowth of the SiO&lt;sub&gt;2&lt;/sub&gt; by Ge, using the reduced Ge dots as the seeds for epitaxy}},
  author       = {{Zela, Vilma and Sass, T. and Gustafsson, Anders and Pietzonka, I. and Seifert, Werner}},
  booktitle    = {{7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science}},
  keywords     = {{Si; 620 degC; Ge; lateral epitaxial overgrowth; Si substrate; phase segregated Ge enrichments; selective reduction; high resolution transmission electron microscopy; UHV-CVD; dome shaped three dimensional islands; Ge/Si islands; reduction behaviour; oxidation behaviour}},
  language     = {{eng}},
  publisher    = {{Lund University}},
  title        = {{Oxidation and reduction behaviour of Ge/Si islands}},
  year         = {{2002}},
}