A resonant tunneling permeable base transistor with Al-free tunneling barriers
(2002) Device Research Conference, 2002 p.155-156- Abstract
- Summary form only given. Resonant tunneling based devices are an intriguing set of devices with promising high speed, low power and high functionality capabilities. We have developed an technology to embed metallic features on the nm-scale inside a semiconductor. By combining such metallic features and heterostructures we have developed a new type of tunneling transistor, the so called Resonant Tunneling Permeable Base Transistor (RT-PBT), where a double barrier heterostructure is placed in close vicinity to a metal grating. A three step fabrication process is described
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/611777
- author
- Lind, Erik LU ; Lindström, Peter LU ; Pietzonka, I. ; Seifert, Werner LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2002
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- GaAsP/GaAs/GaAsP heterostructure, 20 to 100 GHz, double barrier heterostructure, metal grating, lift-off, Al-free tunneling barriers, resonant tunneling permeable base transistor, RT-PBT, resonant tunneling PBT, three step fabrication process, MOVPE, W features, electron beam lithography, GaAsP-GaAs-GaAsP, W
- host publication
- Device Research Conference (Cat. No.02TH8606)
- pages
- 155 - 156
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- Device Research Conference, 2002
- conference location
- Santa Barbara, CA, United States
- conference dates
- 2002-06-24 - 2002-06-26
- external identifiers
-
- scopus:84948667517
- ISBN
- 0-7803-7317-0
- DOI
- 10.1109/DRC.2002.1029571
- language
- English
- LU publication?
- yes
- id
- 394bff6f-30ff-48af-b394-a02602602e60 (old id 611777)
- date added to LUP
- 2016-04-04 12:06:18
- date last changed
- 2022-02-13 22:20:38
@inproceedings{394bff6f-30ff-48af-b394-a02602602e60, abstract = {{Summary form only given. Resonant tunneling based devices are an intriguing set of devices with promising high speed, low power and high functionality capabilities. We have developed an technology to embed metallic features on the nm-scale inside a semiconductor. By combining such metallic features and heterostructures we have developed a new type of tunneling transistor, the so called Resonant Tunneling Permeable Base Transistor (RT-PBT), where a double barrier heterostructure is placed in close vicinity to a metal grating. A three step fabrication process is described}}, author = {{Lind, Erik and Lindström, Peter and Pietzonka, I. and Seifert, Werner and Wernersson, Lars-Erik}}, booktitle = {{Device Research Conference (Cat. No.02TH8606)}}, isbn = {{0-7803-7317-0}}, keywords = {{GaAsP/GaAs/GaAsP heterostructure; 20 to 100 GHz; double barrier heterostructure; metal grating; lift-off; Al-free tunneling barriers; resonant tunneling permeable base transistor; RT-PBT; resonant tunneling PBT; three step fabrication process; MOVPE; W features; electron beam lithography; GaAsP-GaAs-GaAsP; W}}, language = {{eng}}, pages = {{155--156}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{A resonant tunneling permeable base transistor with Al-free tunneling barriers}}, url = {{http://dx.doi.org/10.1109/DRC.2002.1029571}}, doi = {{10.1109/DRC.2002.1029571}}, year = {{2002}}, }