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A resonant tunneling permeable base transistor with Al-free tunneling barriers

Lind, Erik LU ; Lindström, Peter LU ; Pietzonka, I.; Seifert, Werner LU and Wernersson, Lars-Erik LU (2002) Device Research Conference, 2002 In Device Research Conference (Cat. No.02TH8606) p.155-156
Abstract
Summary form only given. Resonant tunneling based devices are an intriguing set of devices with promising high speed, low power and high functionality capabilities. We have developed an technology to embed metallic features on the nm-scale inside a semiconductor. By combining such metallic features and heterostructures we have developed a new type of tunneling transistor, the so called Resonant Tunneling Permeable Base Transistor (RT-PBT), where a double barrier heterostructure is placed in close vicinity to a metal grating. A three step fabrication process is described
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
GaAsP/GaAs/GaAsP heterostructure, 20 to 100 GHz, double barrier heterostructure, metal grating, lift-off, Al-free tunneling barriers, resonant tunneling permeable base transistor, RT-PBT, resonant tunneling PBT, three step fabrication process, MOVPE, W features, electron beam lithography, GaAsP-GaAs-GaAsP, W
in
Device Research Conference (Cat. No.02TH8606)
pages
155 - 156
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
Device Research Conference, 2002
external identifiers
  • Scopus:84948667517
ISBN
0-7803-7317-0
DOI
10.1109/DRC.2002.1029571
language
English
LU publication?
yes
id
394bff6f-30ff-48af-b394-a02602602e60 (old id 611777)
date added to LUP
2007-11-28 09:38:43
date last changed
2016-10-13 04:49:39
@misc{394bff6f-30ff-48af-b394-a02602602e60,
  abstract     = {Summary form only given. Resonant tunneling based devices are an intriguing set of devices with promising high speed, low power and high functionality capabilities. We have developed an technology to embed metallic features on the nm-scale inside a semiconductor. By combining such metallic features and heterostructures we have developed a new type of tunneling transistor, the so called Resonant Tunneling Permeable Base Transistor (RT-PBT), where a double barrier heterostructure is placed in close vicinity to a metal grating. A three step fabrication process is described},
  author       = {Lind, Erik and Lindström, Peter and Pietzonka, I. and Seifert, Werner and Wernersson, Lars-Erik},
  isbn         = {0-7803-7317-0},
  keyword      = {GaAsP/GaAs/GaAsP heterostructure,20 to 100 GHz,double barrier heterostructure,metal grating,lift-off,Al-free tunneling barriers,resonant tunneling permeable base transistor,RT-PBT,resonant tunneling PBT,three step fabrication process,MOVPE,W features,electron beam lithography,GaAsP-GaAs-GaAsP,W},
  language     = {eng},
  pages        = {155--156},
  publisher    = {ARRAY(0xad11ea0)},
  series       = {Device Research Conference (Cat. No.02TH8606)},
  title        = {A resonant tunneling permeable base transistor with Al-free tunneling barriers},
  url          = {http://dx.doi.org/10.1109/DRC.2002.1029571},
  year         = {2002},
}