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Electronic structure of nanometer-scale semiconductor wires

Persson, Martin LU and Xu, Hongqi LU (2003) IEEE Conference on Nanotechnology In 2003 Third IEEE Conference on Nanotechnology. IEEE-NANO 2003. Proceedings (Cat. No.03TH8700) p.111-114
Abstract
We report a theoretical study of the electronic structure and optical properties of GaAs nanowires grown in the [111] direction with a hexagonal cross section, based on a tight-binding approach. It is shown that in the nanowires the degeneracy of the light-hole and heavy-hole bands at the Γ-point seen in the bulk material is lifted, and the light-hole state is located above the heavy-hole state, in strong contrast to the prediction by effective mass theory. The imaginary part of the dielectric function of the nanowires is also calculated and the absorption spectra is found to be strongly polarized
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
effective mass theory, hole state, bulk material, hole bands, tight binding technique, hexagonal cross section, GaAs nanowires [111] direction, optical properties, electronic structure, nanometer scale semiconductor wires, GaAs, absorption spectra, nanowires, polarization, dielectric function
in
2003 Third IEEE Conference on Nanotechnology. IEEE-NANO 2003. Proceedings (Cat. No.03TH8700)
pages
111 - 114
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
IEEE Conference on Nanotechnology
external identifiers
  • WOS:000185389900029
  • Scopus:84943244022
ISBN
0-7803-7976-4
DOI
10.1109/NANO.2003.1231727
language
English
LU publication?
yes
id
32416d76-8286-4153-aa4a-7699dd3c554f (old id 612113)
date added to LUP
2007-11-30 15:51:21
date last changed
2016-10-13 04:48:39
@misc{32416d76-8286-4153-aa4a-7699dd3c554f,
  abstract     = {We report a theoretical study of the electronic structure and optical properties of GaAs nanowires grown in the [111] direction with a hexagonal cross section, based on a tight-binding approach. It is shown that in the nanowires the degeneracy of the light-hole and heavy-hole bands at the Γ-point seen in the bulk material is lifted, and the light-hole state is located above the heavy-hole state, in strong contrast to the prediction by effective mass theory. The imaginary part of the dielectric function of the nanowires is also calculated and the absorption spectra is found to be strongly polarized},
  author       = {Persson, Martin and Xu, Hongqi},
  isbn         = {0-7803-7976-4},
  keyword      = {effective mass theory,hole state,bulk material,hole bands,tight binding technique,hexagonal cross section,GaAs nanowires [111] direction,optical properties,electronic structure,nanometer scale semiconductor wires,GaAs,absorption spectra,nanowires,polarization,dielectric function},
  language     = {eng},
  pages        = {111--114},
  publisher    = {ARRAY(0x9e16508)},
  series       = {2003 Third IEEE Conference on Nanotechnology. IEEE-NANO 2003. Proceedings (Cat. No.03TH8700)},
  title        = {Electronic structure of nanometer-scale semiconductor wires},
  url          = {http://dx.doi.org/10.1109/NANO.2003.1231727},
  year         = {2003},
}