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Design of resonant tunneling permeable base transistors

Lindström, Peter LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2004) 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings In 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) p.158-163
Abstract
We evaluate the performance of resonant tunneling permeable base transistors (RT-PBTs) by numerical simulations. Since the current is limited by the barriers, a design with a low doping level around the embedded gate wires is chosen to improve the transconductance. We evaluate the influence of the various geometrical parameters, to optimize the design for high frequency operation. We obtain a performance comparable to conventional PBTs, to which we have incorporated the tunneling characteristics
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
geometrical parameters, transconductance, gate wires, doping level, permeable base transistors, resonant tunneling, high frequency operation, tunneling characteristics
in
2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)
pages
158 - 163
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings
external identifiers
  • WOS:000226028400026
ISBN
0-7803-8614-0
language
English
LU publication?
yes
id
a13057d6-dd7d-4081-a2f1-1911efe4e78c (old id 613448)
alternative location
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1354448
date added to LUP
2007-11-29 13:11:45
date last changed
2016-04-16 07:13:23
@misc{a13057d6-dd7d-4081-a2f1-1911efe4e78c,
  abstract     = {We evaluate the performance of resonant tunneling permeable base transistors (RT-PBTs) by numerical simulations. Since the current is limited by the barriers, a design with a low doping level around the embedded gate wires is chosen to improve the transconductance. We evaluate the influence of the various geometrical parameters, to optimize the design for high frequency operation. We obtain a performance comparable to conventional PBTs, to which we have incorporated the tunneling characteristics},
  author       = {Lindström, Peter and Lind, Erik and Wernersson, Lars-Erik},
  isbn         = {0-7803-8614-0},
  keyword      = {geometrical parameters,transconductance,gate wires,doping level,permeable base transistors,resonant tunneling,high frequency operation,tunneling characteristics},
  language     = {eng},
  pages        = {158--163},
  publisher    = {ARRAY(0x9dfbc10)},
  series       = {2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)},
  title        = {Design of resonant tunneling permeable base transistors},
  year         = {2004},
}