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InAs1-xPx Nanowires for Device Engineering

Persson, Ann LU ; Björk, Mikael LU ; Jeppesen, Sören LU ; Wagner, Jakob LU ; Wallenberg, Reine LU and Samuelson, Lars LU (2006) In Nano Letters 6(3). p.403-407
Abstract
We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P

concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter

of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution

transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual

heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements

we extract a... (More)
We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P

concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter

of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution

transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual

heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements

we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2

eV. Finally, homogeneous InAs0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at

room temperature. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
6
issue
3
pages
403 - 407
publisher
The American Chemical Society
external identifiers
  • PMID:16522031
  • WOS:000236049800013
  • Scopus:33645453261
ISSN
1530-6992
DOI
10.1021/nl052181e
language
English
LU publication?
yes
id
22962a94-7e19-47e5-9bb6-63fe0ba1c1fc (old id 644133)
alternative location
http://pubs.acs.org/cgi-bin/article.cgi/nalefd/2006/6/i03/pdf/nl052181e.pdf
date added to LUP
2007-12-03 16:45:20
date last changed
2016-10-13 04:43:57
@misc{22962a94-7e19-47e5-9bb6-63fe0ba1c1fc,
  abstract     = {We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P<br/><br>
concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter<br/><br>
of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution<br/><br>
transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual<br/><br>
heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements<br/><br>
we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2<br/><br>
eV. Finally, homogeneous InAs0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at<br/><br>
room temperature.},
  author       = {Persson, Ann and Björk, Mikael and Jeppesen, Sören and Wagner, Jakob and Wallenberg, Reine and Samuelson, Lars},
  issn         = {1530-6992},
  language     = {eng},
  number       = {3},
  pages        = {403--407},
  publisher    = {ARRAY(0xb379f20)},
  series       = {Nano Letters},
  title        = {InAs1-xPx Nanowires for Device Engineering},
  url          = {http://dx.doi.org/10.1021/nl052181e},
  volume       = {6},
  year         = {2006},
}