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Surface engineering of SiC via sublimation etching

Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran LU ; Zakharov, Alexei LU ; Iakimov, Tihomir; Syväjärvi, Mikael and Yakimova, Rositsa (2016) In Applied Surface Science 390. p.816-822
Abstract

We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10−5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such... (More)

We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10−5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
3C-SiC, 4H-SiC, 6H-SiC, Sublimation, Sublimation etching
in
Applied Surface Science
volume
390
pages
7 pages
publisher
Elsevier
external identifiers
  • Scopus:84989818502
ISSN
0169-4332
DOI
10.1016/j.apsusc.2016.08.149
language
English
LU publication?
yes
id
72c10112-59c3-4126-95db-4dfcf9fb0075
date added to LUP
2016-10-18 08:05:48
date last changed
2016-10-18 08:05:48
@misc{72c10112-59c3-4126-95db-4dfcf9fb0075,
  abstract     = {<p>We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10<sup>−5</sup> mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.</p>},
  author       = {Jokubavicius, Valdas and Yazdi, Gholam R. and Ivanov, Ivan G. and Niu, Yuran and Zakharov, Alexei and Iakimov, Tihomir and Syväjärvi, Mikael and Yakimova, Rositsa},
  issn         = {0169-4332},
  keyword      = {3C-SiC,4H-SiC,6H-SiC,Sublimation,Sublimation etching},
  language     = {eng},
  month        = {12},
  pages        = {816--822},
  publisher    = {ARRAY(0xddc2cc0)},
  series       = {Applied Surface Science},
  title        = {Surface engineering of SiC via sublimation etching},
  url          = {http://dx.doi.org/10.1016/j.apsusc.2016.08.149},
  volume       = {390},
  year         = {2016},
}