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Surface diffusion effects on growth of nanowires by chemical beam epitaxy

Persson, Ann LU ; Fröberg, Linus LU ; Jeppesen, Sören LU ; Björk, Mikael LU and Samuelson, Lars LU (2007) In Journal of Applied Physics 101.
Abstract
Surface processes play a large role in the growth of semiconductor nanowires by chemical beam

epitaxy. In particular, for III-V nanowires the surface diffusion of group-III species is important to

understand in order to control the nanowire growth. In this paper, we have grown InAs-based

nanowires positioned by electron beam lithography and have investigated the dependence of the

diffusion of In species on temperature, group-III and -V source pressure and group-V source

combinations by measuring nanowire growth rate for different nanowire spacings. We present a

model which relates the nanowire growth rate to the migration length of In species. The model is

fitted to the... (More)
Surface processes play a large role in the growth of semiconductor nanowires by chemical beam

epitaxy. In particular, for III-V nanowires the surface diffusion of group-III species is important to

understand in order to control the nanowire growth. In this paper, we have grown InAs-based

nanowires positioned by electron beam lithography and have investigated the dependence of the

diffusion of In species on temperature, group-III and -V source pressure and group-V source

combinations by measuring nanowire growth rate for different nanowire spacings. We present a

model which relates the nanowire growth rate to the migration length of In species. The model is

fitted to the experimental data for different growth conditions, using the migration length as fitting

parameter. The results show that the migration length increases with decreasing temperature and

increasing group-V/group-III source pressure ratio. This will most often lead to an increase in

growth rate, but deviations will occur due to incomplete decomposition and changes in sticking

coefficient for group-III species. The results also show that the introduction of phosphorous

precursor for growth of InAs1−xPx nanowires decreases the migration length of the In species

followed by a decrease in nanowire growth rate. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Applied Physics
volume
101
publisher
American Institute of Physics
external identifiers
  • WOS:000244250100135
  • Scopus:33847112814
DOI
10.1063/1.2435800
language
English
LU publication?
yes
id
b1507772-836f-460f-a1e3-7ddadda1da88 (old id 760667)
date added to LUP
2007-12-17 15:07:50
date last changed
2016-12-04 04:47:10
@misc{b1507772-836f-460f-a1e3-7ddadda1da88,
  abstract     = {Surface processes play a large role in the growth of semiconductor nanowires by chemical beam<br/><br>
epitaxy. In particular, for III-V nanowires the surface diffusion of group-III species is important to<br/><br>
understand in order to control the nanowire growth. In this paper, we have grown InAs-based<br/><br>
nanowires positioned by electron beam lithography and have investigated the dependence of the<br/><br>
diffusion of In species on temperature, group-III and -V source pressure and group-V source<br/><br>
combinations by measuring nanowire growth rate for different nanowire spacings. We present a<br/><br>
model which relates the nanowire growth rate to the migration length of In species. The model is<br/><br>
fitted to the experimental data for different growth conditions, using the migration length as fitting<br/><br>
parameter. The results show that the migration length increases with decreasing temperature and<br/><br>
increasing group-V/group-III source pressure ratio. This will most often lead to an increase in<br/><br>
growth rate, but deviations will occur due to incomplete decomposition and changes in sticking<br/><br>
coefficient for group-III species. The results also show that the introduction of phosphorous<br/><br>
precursor for growth of InAs1−xPx nanowires decreases the migration length of the In species<br/><br>
followed by a decrease in nanowire growth rate.},
  author       = {Persson, Ann and Fröberg, Linus and Jeppesen, Sören and Björk, Mikael and Samuelson, Lars},
  language     = {eng},
  publisher    = {ARRAY(0xb592560)},
  series       = {Journal of Applied Physics},
  title        = {Surface diffusion effects on growth of nanowires by chemical beam epitaxy},
  url          = {http://dx.doi.org/10.1063/1.2435800},
  volume       = {101},
  year         = {2007},
}