Advanced

Diameter-dependent growth rate of InAs nanowires

Fröberg, Linus LU ; Seifert, Werner LU and Johansson, Jonas LU (2007) In Physical Review B. Condensed Matter and Materials Physics 76.
Abstract
We have grown Au seeded InAs nanowires using chemical beam epitaxy and report on the growth rate

dependence on nanowire diameter. We find a maximum of the growth rate at a nanowire diameter of 25 nm,

below which the growth rate decreases due to the Gibbs-Thomson effect. Above the maximum, the growth rate

decreases with increasing diameter due to the effect of material diffusion to the growth point. A unified model,

which accounts for both the Gibbs-Thomson effect and material diffusion, is presented and successfully

compared to the experiments. From the comparison, we extract the diffusion length on the substrate surface

and a critical diameter, below which nanowire growth ceases, and... (More)
We have grown Au seeded InAs nanowires using chemical beam epitaxy and report on the growth rate

dependence on nanowire diameter. We find a maximum of the growth rate at a nanowire diameter of 25 nm,

below which the growth rate decreases due to the Gibbs-Thomson effect. Above the maximum, the growth rate

decreases with increasing diameter due to the effect of material diffusion to the growth point. A unified model,

which accounts for both the Gibbs-Thomson effect and material diffusion, is presented and successfully

compared to the experiments. From the comparison, we extract the diffusion length on the substrate surface

and a critical diameter, below which nanowire growth ceases, and show that these physical parameters can be

tuned by controlling the supersaturation. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B. Condensed Matter and Materials Physics
volume
76
publisher
American Physical Society
external identifiers
  • WOS:000250620400023
DOI
10.1103/PhysRevB.76.153401
language
English
LU publication?
yes
id
5eb1c155-b571-4f1c-92ae-a5e2f8a4e582 (old id 763979)
date added to LUP
2007-12-17 18:16:14
date last changed
2016-11-02 15:17:54
@misc{5eb1c155-b571-4f1c-92ae-a5e2f8a4e582,
  abstract     = {We have grown Au seeded InAs nanowires using chemical beam epitaxy and report on the growth rate<br/><br>
dependence on nanowire diameter. We find a maximum of the growth rate at a nanowire diameter of 25 nm,<br/><br>
below which the growth rate decreases due to the Gibbs-Thomson effect. Above the maximum, the growth rate<br/><br>
decreases with increasing diameter due to the effect of material diffusion to the growth point. A unified model,<br/><br>
which accounts for both the Gibbs-Thomson effect and material diffusion, is presented and successfully<br/><br>
compared to the experiments. From the comparison, we extract the diffusion length on the substrate surface<br/><br>
and a critical diameter, below which nanowire growth ceases, and show that these physical parameters can be<br/><br>
tuned by controlling the supersaturation.},
  author       = {Fröberg, Linus and Seifert, Werner and Johansson, Jonas},
  language     = {eng},
  publisher    = {ARRAY(0xb0bf280)},
  series       = {Physical Review B. Condensed Matter and Materials Physics},
  title        = {Diameter-dependent growth rate of InAs nanowires},
  url          = {http://dx.doi.org/10.1103/PhysRevB.76.153401},
  volume       = {76},
  year         = {2007},
}