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Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions

Wu, Jun LU ; Babadi, Aein Shiri LU ; Jacobsson, Daniel LU ; Colvin, Jovana LU ; Yngman, Sofie LU ; Timm, Rainer LU ; Lind, Erik LU and Wernersson, Lars Erik LU (2016) In Nano Letters 16(4). p.2418-2425
Abstract

In this paper, we correlate the growth of InAs nanowires with the detailed interface trap density (Dit) profile of the vertical wrap-gated InAs/high-k nanowire semiconductor-dielectric gate stack. We also perform the first detailed characterization and optimization of the influence of the in situ doping supplied during the nanowire epitaxial growth on the sequential transistor gate stack quality. Results show that the intrinsic nanowire channels have a significant reduction in Dit as compared to planar references. It is also found that introducing tetraethyltin (TESn) doping during nanowire growth severely degrades the Dit profile. By adopting a high temperature, low V/III ratio tailored growth scheme,... (More)

In this paper, we correlate the growth of InAs nanowires with the detailed interface trap density (Dit) profile of the vertical wrap-gated InAs/high-k nanowire semiconductor-dielectric gate stack. We also perform the first detailed characterization and optimization of the influence of the in situ doping supplied during the nanowire epitaxial growth on the sequential transistor gate stack quality. Results show that the intrinsic nanowire channels have a significant reduction in Dit as compared to planar references. It is also found that introducing tetraethyltin (TESn) doping during nanowire growth severely degrades the Dit profile. By adopting a high temperature, low V/III ratio tailored growth scheme, the influence of doping is minimized. Finally, characterization using a unique frequency behavior of the nanowire capacitance-voltage (C-V) characteristics reveals a change of the dopant incorporation mechanism as the growth condition is changed.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
C-V, D, growth, doping, crystalline phase, Nanowire
in
Nano Letters
volume
16
issue
4
pages
8 pages
publisher
The American Chemical Society
external identifiers
  • Scopus:84964854645
ISSN
1530-6984
DOI
10.1021/acs.nanolett.5b05253
language
English
LU publication?
yes
id
e69832d2-c3c3-43e8-a533-982438c49ab8
date added to LUP
2016-07-08 10:03:40
date last changed
2016-11-27 04:41:39
@misc{e69832d2-c3c3-43e8-a533-982438c49ab8,
  abstract     = {<p>In this paper, we correlate the growth of InAs nanowires with the detailed interface trap density (D<sub>it</sub>) profile of the vertical wrap-gated InAs/high-k nanowire semiconductor-dielectric gate stack. We also perform the first detailed characterization and optimization of the influence of the in situ doping supplied during the nanowire epitaxial growth on the sequential transistor gate stack quality. Results show that the intrinsic nanowire channels have a significant reduction in D<sub>it</sub> as compared to planar references. It is also found that introducing tetraethyltin (TESn) doping during nanowire growth severely degrades the D<sub>it</sub> profile. By adopting a high temperature, low V/III ratio tailored growth scheme, the influence of doping is minimized. Finally, characterization using a unique frequency behavior of the nanowire capacitance-voltage (C-V) characteristics reveals a change of the dopant incorporation mechanism as the growth condition is changed.</p>},
  author       = {Wu, Jun and Babadi, Aein Shiri and Jacobsson, Daniel and Colvin, Jovana and Yngman, Sofie and Timm, Rainer and Lind, Erik and Wernersson, Lars Erik},
  issn         = {1530-6984},
  keyword      = {C-V,D, growth, doping, crystalline phase,Nanowire},
  language     = {eng},
  month        = {04},
  number       = {4},
  pages        = {2418--2425},
  publisher    = {ARRAY(0xba2c040)},
  series       = {Nano Letters},
  title        = {Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.5b05253},
  volume       = {16},
  year         = {2016},
}