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Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Kivisaari, Pyry LU ; Sadi, Toufik; Li, Jingrui; Oksanen, Jani; Rinke, Patrick and Tulkki, Jukka (2015) 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 In 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 2015-May. p.11-12
Abstract

We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.

Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Charge carrier processes, Gallium nitride, Hot carrier effects, Light emitting diodes, Monte Carlo methods, Scattering
in
15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
volume
2015-May
pages
2 pages
publisher
IEEE Computer Society
conference name
15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
external identifiers
  • Scopus:84959233297
DOI
10.1109/NUSOD.2015.7292797
language
English
LU publication?
yes
id
f158b410-158b-4b45-b51e-3200177a71c7
date added to LUP
2016-09-23 12:11:09
date last changed
2016-10-27 09:02:16
@misc{f158b410-158b-4b45-b51e-3200177a71c7,
  abstract     = {<p>We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.</p>},
  author       = {Kivisaari, Pyry and Sadi, Toufik and Li, Jingrui and Oksanen, Jani and Rinke, Patrick and Tulkki, Jukka},
  keyword      = {Charge carrier processes,Gallium nitride,Hot carrier effects,Light emitting diodes,Monte Carlo methods,Scattering},
  language     = {eng},
  month        = {05},
  pages        = {11--12},
  publisher    = {ARRAY(0xc1eec40)},
  series       = {15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015},
  title        = {Bipolar Monte Carlo simulation of hot carriers in III-N LEDs},
  url          = {http://dx.doi.org/10.1109/NUSOD.2015.7292797},
  volume       = {2015-May},
  year         = {2015},
}