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Record
Title
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
Type
Conference Proceeding/Paper
Publ. year
2012
Author/s
Dey, Anil; Borg, Mattias; Ganjipour, Bahram; Ek, Martin et al.
Department/s
Department of Electrical and Information Technology; Solid State Physics; Centre for Analysis and Synthesis; NanoLund: Centre for Nanoscience
In LUP since
2016-04-01
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United States of America 303 (42%)
China 61 (8%)
Sweden 48 (7%)
Germany 32 (4%)
Japan 28 (4%)
France 25 (3%)
Russian Federation 24 (3%)
Taiwan (China) 24 (3%)
Czechia 22 (3%)
India 20 (3%)
United Kingdom of Great Britain and Northern Ireland 18 (2%)
South Korea 13 (2%)
Iran 11 (2%)
Netherlands (Kingdom of the) 7 (1%)
Singapore 6 (1%)
Hong Kong (China) 6 (1%)
Australia 5 (1%)
Turkiye 4 (1%)
Switzerland 4 (1%)
Ireland 4 (1%)
Canada 4 (1%)
Denmark 4 (1%)
Belgium 4 (1%)
Ukraine 4 (1%)
Italy 4 (1%)
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Egypt 1 (0%)
Viet Nam 1 (0%)
Greece 1 (0%)
Israel 1 (0%)
Austria 1 (0%)
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The download statistics shown here have been collected since the launch of LUP in October 2007 and are updated every night. Statistics are available for all records with open access fulltexts. Efforts have been made to exclude downloads by robots and track irregular download activities.

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The information on downloads per country is based on the geolocation of IP addresses and may not be completely accurate. The statistics presented here may also change retroactively when the calculation process is improved to provide more accurate results.

Statistics Last Updated
Wed Jun 26 08:31:15 2024