LUP Statistics
Record
- Title
- RF and DC Analysis of Stressed InGaAs MOSFETs
- Type
- Contribution to Periodical
- Publ. year
- 2014
- Author/s
- Roll, Guntrade; Lind, Erik; Egard, Mikael; Johansson, Sofia et al.
- Department/s
- Department of Electrical and Information Technology; NanoLund: Centre for Nanoscience
- In LUP since
- 2016-04-01
Downloads
| Total | This Year | This Month |
| 930 | 7 | 1 |
United States of America  |
319 (34%) |
Germany  |
139 (15%) |
India  |
72 (8%) |
Sweden  |
52 (6%) |
China  |
50 (5%) |
South Korea  |
40 (4%) |
Taiwan (China)  |
34 (4%) |
France  |
27 (3%) |
Japan  |
24 (3%) |
United Kingdom of Great Britain and Northern Ireland  |
12 (1%) |
Italy  |
12 (1%) |
Russian Federation  |
11 (1%) |
Singapore  |
11 (1%) |
Hong Kong (China)  |
10 (1%) |
Belgium  |
9 (1%) |
Turkiye  |
8 (1%) |
Algeria  |
6 (1%) |
Switzerland  |
6 (1%) |
Malaysia  |
5 (1%) |
Mexico  |
4 (0%) |
Czechia  |
4 (0%) |
Netherlands (Kingdom of the)  |
4 (0%) |
Greece  |
4 (0%) |
Viet Nam  |
4 (0%) |
Denmark  |
4 (0%) |
Ireland  |
4 (0%) |
Egypt  |
4 (0%) |
Israel  |
3 (0%) |
Spain  |
3 (0%) |
Iran  |
3 (0%) |
Unknown  |
3 (0%) |
Brazil  |
3 (0%) |
Canada  |
3 (0%) |
Pakistan  |
3 (0%) |
Philippines  |
2 (0%) |
Bangladesh  |
2 (0%) |
Tunisia  |
2 (0%) |
Australia  |
2 (0%) |
Portugal  |
2 (0%) |
Lithuania  |
2 (0%) |
Ukraine  |
2 (0%) |
South Africa  |
2 (0%) |
Colombia  |
1 (0%) |
Norway  |
1 (0%) |
Saudi Arabia  |
1 (0%) |
Poland  |
1 (0%) |
Ethiopia  |
1 (0%) |
Jordan  |
1 (0%) |
European Union location  |
1 (0%) |
Hungary  |
1 (0%) |
Lebanon  |
1 (0%) |
Estonia  |
1 (0%) |
Jamaica  |
1 (0%) |
Austria  |
1 (0%) |
Unknown (Anonymous Proxy)  |
1 (0%) |
Thailand  |
1 (0%) |