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Record
Title
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
Type
Journal Article
Publ. year
2017
Author/s
Kilpi, Olli Pekka; Svensson, Johannes; Wu, Jun; Persson, Axel R. et al.
Department/s
Nano Electronics; Centre for Analysis and Synthesis; NanoLund: Centre for Nanoscience
In LUP since
2017-10-26
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252 16 0
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United States of America 151 (60%)
China 28 (11%)
Germany 17 (7%)
France 10 (4%)
Sweden 10 (4%)
India 4 (2%)
Finland 4 (2%)
Hong Kong (China) 4 (2%)
United Kingdom of Great Britain and Northern Ireland 3 (1%)
Unknown 3 (1%)
Algeria 2 (1%)
Romania 2 (1%)
Canada 1 (0%)
Senegal 1 (0%)
Brazil 1 (0%)
Netherlands (Kingdom of the) 1 (0%)
Hungary 1 (0%)
Taiwan (China) 1 (0%)
Lithuania 1 (0%)
Singapore 1 (0%)
Ireland 1 (0%)
Denmark 1 (0%)
Switzerland 1 (0%)
Japan 1 (0%)
Malaysia 1 (0%)
Viet Nam 1 (0%)
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The information on downloads per country is based on the geolocation of IP addresses and may not be completely accurate. The statistics presented here may also change retroactively when the calculation process is improved to provide more accurate results.

Statistics Last Updated
Wed Jun 19 08:31:37 2024