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Record
Title
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
Type
Journal Article
Publ. year
2016
Author/s
Berg, Martin; Kilpi, Olli-Pekka; Persson, Karl-Magnus; Svensson, Johannes et al.
Department/s
Department of Electrical and Information Technology; Nano Electronics; NanoLund: Centre for Nanoscience
In LUP since
2016-09-15
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481 6 2
Downloads per country

United States of America 225 (47%)
Germany 94 (20%)
Sweden 59 (12%)
China 40 (8%)
Taiwan (China) 12 (2%)
India 8 (2%)
France 6 (1%)
Hong Kong (China) 6 (1%)
Unknown 4 (1%)
Czechia 4 (1%)
Finland 4 (1%)
South Korea 4 (1%)
Netherlands (Kingdom of the) 2 (0%)
Viet Nam 1 (0%)
Lithuania 1 (0%)
Spain 1 (0%)
Romania 1 (0%)
Bulgaria 1 (0%)
Ireland 1 (0%)
United Kingdom of Great Britain and Northern Ireland 1 (0%)
Russian Federation 1 (0%)
Italy 1 (0%)
Hungary 1 (0%)
Japan 1 (0%)
Belgium 1 (0%)
Brazil 1 (0%)
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The information on downloads per country is based on the geolocation of IP addresses and may not be completely accurate. The statistics presented here may also change retroactively when the calculation process is improved to provide more accurate results.

Statistics Last Updated
Thu Jul 25 08:37:33 2024