LUP Statistics
Record
- Title
- Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v
- Type
- Conference Proceeding/Paper
- Publ. year
- 2017
- Author/s
- Kilpi, Olli Pekka; Wu, Jun; Svensson, Johannes; Lind, Erik et al.
- Department/s
- Nano Electronics
- In LUP since
- 2017-09-07
Downloads
| Total | This Year | This Month |
| 200 | 4 | 0 |
United States of America  |
128 (64%) |
Sweden  |
14 (7%) |
Germany  |
13 (7%) |
China  |
11 (6%) |
Hong Kong (China)  |
6 (3%) |
France  |
6 (3%) |
Russian Federation  |
3 (2%) |
Taiwan (China)  |
2 (1%) |
Finland  |
2 (1%) |
United Kingdom of Great Britain and Northern Ireland  |
2 (1%) |
Unknown  |
2 (1%) |
Ukraine  |
1 (1%) |
Denmark  |
1 (1%) |
Bangladesh  |
1 (1%) |
Viet Nam  |
1 (1%) |
Japan  |
1 (1%) |
Australia  |
1 (1%) |
South Korea  |
1 (1%) |
India  |
1 (1%) |
Czechia  |
1 (1%) |
Ireland  |
1 (1%) |
Senegal  |
1 (1%) |