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Record
Title
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
Type
Journal Article
Publ. year
2017
Author/s
Memisevic, Elvedin; Hellenbrand, Markus; Lind, Erik; Persson, Axel et al.
Department/s
Nano Electronics; Department of Electrical and Information Technology; Centre for Analysis and Synthesis; NanoLund: Centre for Nanoscience
In LUP since
2017-06-22
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Total This Year This Month
389 8 2
Downloads per country

United States of America 235 (60%)
Germany 29 (7%)
France 28 (7%)
Sweden 18 (5%)
China 17 (4%)
India 11 (3%)
South Korea 7 (2%)
United Kingdom of Great Britain and Northern Ireland 5 (1%)
Russian Federation 3 (1%)
Hong Kong (China) 3 (1%)
Singapore 3 (1%)
Japan 3 (1%)
Hungary 2 (1%)
Taiwan (China) 2 (1%)
Netherlands 2 (1%)
Algeria 2 (1%)
Romania 2 (1%)
Bangladesh 1 (0%)
Belgium 1 (0%)
Italy 1 (0%)
Canada 1 (0%)
Estonia 1 (0%)
Latvia 1 (0%)
Saudi Arabia 1 (0%)
Iran 1 (0%)
Norway 1 (0%)
Austria 1 (0%)
Brazil 1 (0%)
Denmark 1 (0%)
Ukraine 1 (0%)
Viet Nam 1 (0%)
Tanzania, the United Republic of 1 (0%)
Ireland 1 (0%)
Czechia 1 (0%)
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The download statistics shown here have been collected since the launch of LUP in October 2007 and are updated every night. Statistics are available for all records with open access fulltexts. Efforts have been made to exclude downloads by robots and track irregular download activities.

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The information on downloads per country is based on the geolocation of IP addresses and may not be completely accurate. The statistics presented here may also change retroactively when the calculation process is improved to provide more accurate results.

Statistics Last Updated
Fri Apr 26 08:43:29 2024