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Record
Title
Vertical, High-Performance 12 nm diameter InAs Nanowire MOSFETs on Si using an all III-V CMOS process
Type
Contribution to Conference
Publ. year
2018
Author/s
Jönsson, Adam; Svensson, Johannes; Wernersson, Lars-Erik
Department/s
Nano Electronics
In LUP since
2019-02-19
Downloads

Total This Year This Month
104 5 0
Downloads per country

Sweden 17 (17%)
United States of America 14 (14%)
Germany 13 (13%)
China 8 (8%)
Czechia 8 (8%)
France 6 (6%)
Russian Federation 5 (5%)
Malaysia 4 (4%)
Singapore 4 (4%)
Hong Kong (China) 4 (4%)
Netherlands (Kingdom of the) 2 (2%)
Unknown 2 (2%)
Taiwan (China) 2 (2%)
United Kingdom of Great Britain and Northern Ireland 2 (2%)
Switzerland 2 (2%)
India 2 (2%)
Japan 2 (2%)
Denmark 1 (1%)
Senegal 1 (1%)
Turkiye 1 (1%)
Hungary 1 (1%)
Ireland 1 (1%)
Belgium 1 (1%)
About
The download statistics shown here have been collected since the launch of LUP in October 2007 and are updated every night. Statistics are available for all records with open access fulltexts. Efforts have been made to exclude downloads by robots and track irregular download activities.

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Disclaimer
The information on downloads per country is based on the geolocation of IP addresses and may not be completely accurate. The statistics presented here may also change retroactively when the calculation process is improved to provide more accurate results.

Statistics Last Updated
Fri Jul 18 08:35:05 2025