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Record
Title
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
Type
Conference Proceeding/Paper
Publ. year
2016
Author/s
Berg, Martin; Persson, Karl-Magnus; Kilpi, Olli-Pekka; Svensson, Johannes et al.
Department/s
Department of Electrical and Information Technology; NanoLund: Centre for Nanoscience
In LUP since
2016-06-16
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Germany 25 (7%)
France 6 (2%)
United Kingdom of Great Britain and Northern Ireland 6 (2%)
Hong Kong (China) 6 (2%)
Finland 5 (1%)
India 4 (1%)
Singapore 3 (1%)
Czechia 3 (1%)
South Korea 3 (1%)
Russian Federation 3 (1%)
Japan 3 (1%)
Brazil 2 (1%)
Ukraine 2 (1%)
Romania 2 (1%)
Taiwan (China) 2 (1%)
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The download statistics shown here have been collected since the launch of LUP in October 2007 and are updated every night. Statistics are available for all records with open access fulltexts. Efforts have been made to exclude downloads by robots and track irregular download activities.

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Statistics Last Updated
Thu Jul 17 08:37:11 2025