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Record
Title
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
Type
Conference Proceeding/Paper
Publ. year
2016
Author/s
Berg, Martin; Persson, Karl-Magnus; Kilpi, Olli-Pekka; Svensson, Johannes et al.
Department/s
Department of Electrical and Information Technology; NanoLund: Centre for Nanoscience
In LUP since
2016-06-16
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Germany 24 (7%)
France 6 (2%)
Hong Kong (China) 5 (1%)
Finland 4 (1%)
Singapore 3 (1%)
United Kingdom of Great Britain and Northern Ireland 3 (1%)
South Korea 3 (1%)
Russian Federation 3 (1%)
India 3 (1%)
Japan 3 (1%)
Czechia 3 (1%)
Ukraine 2 (1%)
Romania 2 (1%)
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Indonesia 1 (0%)
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The information on downloads per country is based on the geolocation of IP addresses and may not be completely accurate. The statistics presented here may also change retroactively when the calculation process is improved to provide more accurate results.

Statistics Last Updated
Wed Apr 24 08:42:52 2024