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Record
Title
Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor Performance
Type
Journal Article
Publ. year
2023
Author/s
Athle, Robin; Borg, Mattias
Department/s
Nano Electronics; NanoLund: Centre for Nanoscience; LTH Profile Area: AI and Digitalization; LTH Profile Area: Nanoscience and Semiconductor Technology; LU Profile Area: Light and Materials
In LUP since
2023-03-10
Downloads

Total This Year This Month
69 0 0
Downloads per country
China 19 (28%)
United States of America 18 (26%)
Sweden 7 (10%)
Singapore 5 (7%)
South Korea 4 (6%)
Unknown 4 (6%)
Netherlands (Kingdom of the) 2 (3%)
India 1 (1%)
Denmark 1 (1%)
Canada 1 (1%)
Mexico 1 (1%)
Taiwan (China) 1 (1%)
Australia 1 (1%)
Indonesia 1 (1%)
Russian Federation 1 (1%)
Germany 1 (1%)
Japan 1 (1%)
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The download statistics shown here have been collected since the launch of LUP in October 2007 and are updated every night. Statistics are available for all records with open access fulltexts. Efforts have been made to exclude downloads by robots and track irregular download activities.

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The information on downloads per country is based on the geolocation of IP addresses and may not be completely accurate. The statistics presented here may also change retroactively when the calculation process is improved to provide more accurate results.

Statistics Last Updated
Sat Feb 14 08:51:39 2026