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- 2011
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Mark
Schottky barriers in carbon nanotube-metal contacts
(
- Contribution to journal › Article
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Mark
Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
(
- Contribution to journal › Article
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Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
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- Contribution to journal › Article
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Mark
GaSb nanowire single-hole transistor
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- Contribution to journal › Article
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Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article
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Mark
15 nm diameter InAs nanowire MOSFETs
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Conflict management in student groups - a teacher’s perspective in higher education
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- Contribution to journal › Article
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Mark
Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Inverter circuits based on vertical InAs nanowire MOSFETs
2011) Swedish System-on-Chip Conference, SSoCC 2011(
- Contribution to conference › Paper, not in proceeding