Nano Electronics
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- 2023
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Mark
Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
(
- Contribution to journal › Article
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Mark
Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
(
- Contribution to journal › Article
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Mark
The ESSnuSB Design Study: Overview and Future Prospects
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- Contribution to journal › Article
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Mark
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
(
- Contribution to journal › Article
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Mark
Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
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- Contribution to journal › Article
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Mark
Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts
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- Contribution to journal › Article
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Mark
Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs
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- Contribution to journal › Article
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Mark
Radio Frequency InGaAs MOSFETs
2023)(
- Thesis › Doctoral thesis (compilation)
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Mark
gm/Id Analysis of vertical nanowire III–V TFETs
(
- Contribution to journal › Article
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Mark
Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding