Jesper Wallentin
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- 2013
-
Mark
Large-energy-shift photon upconversion in degenerately doped InP nanowires by direct excitation into the electron gas
(
- Contribution to journal › Article
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Mark
A General Approach for Sharp Crystal Phase Switching in InAs, GaAs, InP, and GaP Nanowires Using Only Group V Flow.
(
- Contribution to journal › Article
-
Mark
Transparently Wrap-Gated Semiconductor Nanowire Arrays For Studies Of Gate-Controlled Photoluminescence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2012
-
Mark
Electron Trapping in InP Nanowire FETs with Stacking Faults.
(
- Contribution to journal › Article
-
Mark
Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures
(
- Contribution to journal › Article
-
Mark
Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors.
(
- Contribution to journal › Article
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Mark
Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point
(
- Contribution to journal › Article
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Mark
Surface Chemistry, Structure, and Electronic Properties from Microns to the Atomic Scale of Axially Doped Semiconductor Nanowires.
2012) In ACS Nano(
- Contribution to journal › Article
-
Mark
Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.
(
- Contribution to journal › Article
-
Mark
Doping of Semiconductor Nanowires
2012)(
- Thesis › Doctoral thesis (compilation)