Lennart Lindström (Former)
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- 2005
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Mark
Calibration factor for determination of interstitial oxygen concentration in germanium by infrared absorption
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- Contribution to journal › Article
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Mark
VOn (n >= 3) defects in irradiated and heat-treated silicon
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- Contribution to journal › Article
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Mark
Electrically active radiation-induced defects in Czochralski-grown Si with low carbon content
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- Contribution to journal › Article
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Mark
Characterization of oxygen dimer-enriched silicon detectors
2005) In Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment 552(1-2). p.49-55(
- Contribution to journal › Article
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Mark
Metastable VO2 complexes in silicon: experimental and theoretical modeling studies
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- Contribution to journal › Article
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Mark
Radiation-hard semiconductor detectors for SuperLHC
2005) In Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment 541(1-2). p.189-201(
- Contribution to journal › Article
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Mark
Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon
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- Contribution to journal › Article
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Mark
Thermal double donor annihilation and oxygen precipitation at around 650 degrees C in Czochralski-grown Si: local vibrational mode studies
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- Contribution to journal › Article
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Mark
Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies
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- Contribution to journal › Article
- 2003
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Mark
Resonant interaction between localized and extended vibrational modes in Si: O-18 under pressure
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- Contribution to journal › Article