Zhongyunshen Zhu
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- 2023
-
Mark
Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
(
- Contribution to journal › Article
-
Mark
gm/Id Analysis of vertical nanowire III–V TFETs
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
High Current Density Vertical Nanowire TFETs With I₆₀ > 1
μ
A/
μ
m
(
- Contribution to journal › Article
- 2022
-
Mark
Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
(
- Contribution to journal › Article
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Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
(
- Contribution to journal › Article
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Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
- 2020
-
Mark
Compressively-strained GaSb nanowires with core-shell heterostructures
(
- Contribution to journal › Article
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Mark
Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
(
- Contribution to journal › Article
-
Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
(
- Contribution to journal › Article