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- 2012
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Mark
Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy
(
- Contribution to journal › Article
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Combinatorial Approaches to Understanding Polytypism in III-V Nanowires.
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- Contribution to journal › Article
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Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
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- Contribution to journal › Article
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Mark
Phonon transport and thermoelectricity in defect-engineered InAs nanowires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
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- Contribution to journal › Article
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Mark
Vertical "III-V" V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si[001] Substrate and Their Enhanced Light Scattering
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- Contribution to journal › Article
- 2011
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Mark
Crystal Phases in III-V Nanowires: From Random Toward Engineered Polytypism
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- Contribution to journal › Article
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Wurtzite-zincblende superlattices in InAs nanowires using a supply interruption method.
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- Contribution to journal › Article
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Effects of crystal phase mixing on the electrical properties of InAs nanowires
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- Contribution to journal › Article
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Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding