31 – 38 of 38
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- « previous
- 1
- 2
- 3
- 4
- next »
- 2011
-
Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
Low-frequency noise in vertical InAs nanowire FETs
(
- Contribution to journal › Article
-
Mark
Modelling and optimization of III/V transistors with matrices of nanowires
(
- Contribution to journal › Article
- 2009
-
Mark
Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
(
- Contribution to journal › Article
- 2007
-
Mark
Nanowire field-effect transistor
(
- Contribution to journal › Article
- 2005
-
Mark
InAs epitaxial lateral overgrowth of W masks
(
- Contribution to journal › Article
-
Mark
Wrap-gated InAs nanowire field-effect transistor
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- « previous
- 1
- 2
- 3
- 4
- next »