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- 2020
-
Mark
Local defect-enhanced anodic oxidation of reformed GaN nanowires
Colvin, Jovana LU ; Ciechonski, Rafal ; Gustafsson, Anders LU ; Samuelson, Lars LU ; Ohlsson, B. Jonas and Timm, Rainer LU
(2020)
In Physical Review Materials
4(7).
- Contribution to journal › Article
-
Mark
Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device-Quality GaN Templates
- Contribution to journal › Article
- 2019
-
Mark
Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays
Colvin, Jovana LU ; Ciechonski, Rafal ; Lenrick, Filip LU ; Hultin, Olof LU ; Khalilian, Maryam LU ; Mikkelsen, Anders LU ; Gustafsson, Anders LU ; Samuelson, Lars LU ; Timm, Rainer LU
and Ohlsson, Jonas
LU
(2019)
In Physical Review Materials
3(9).
- Contribution to journal › Article
- 2015
-
Mark
Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence
Pozina, Galia ; Ciechonski, Rafal ; Bi, Zhaoxia LU
; Samuelson, Lars
LU
and Monemar, Bo
LU
(2015)
In Applied Physics Letters
107(25).
- Contribution to journal › Article
-
Mark
Measurement of strain in InGaN/GaN nanowires and nanopyramids
Stankevic, Tomas ; Mickevicius, Simas ; Nielsen, Mikkel Schou ; Kryliouk, Olga ; Ciechonski, Rafal ; Vescovi, Giuliano ; Bi, Zhaoxia LU
; Mikkelsen, Anders
LU
; Samuelson, Lars
LU
and Gundlach, Carsten
, et al.
(2015)
In Journal of Applied Crystallography
48.
p.344-349
- Contribution to journal › Article
-
Mark
Fast Strain Mapping of Nanowire Light-Emitting Diodes Using Nanofocused X-ray Beams.
- Contribution to journal › Article