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- 2024
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Mark
High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
(
- Contribution to journal › Article
-
Mark
Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
(
- Chapter in Book/Report/Conference proceeding › Book chapter
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Mark
Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties
(
- Contribution to journal › Article
- 2023
-
Mark
Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
(
- Contribution to journal › Article
- 2022
-
Mark
Linear strain and stress potential parameters for the three fundamental band to band transitions in β-Ga2O3
(
- Contribution to journal › Article
-
Mark
Mg-doping and free-hole properties of hot-wall MOCVD GaN
(
- Contribution to journal › Article
- 2017
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Mark
Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC
(
- Contribution to journal › Article
- 2016
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Mark
Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)
(
- Contribution to journal › Article
- 2014
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Mark
Morphological and electronic properties of epitaxial graphene on SiC
(
- Contribution to journal › Article
- 2013
-
Mark
Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)
(
- Contribution to journal › Article