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2025
Mark Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(0001̄)
Zhang, Hengfang ; Chen, Jr Tai ; Papamichail, Alexis ; Persson, Ingemar ; Tran, Dat Q. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2025) In Journal of Crystal Growth 651.
- Contribution to journal › Article
2024
Mark Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
Sundarapandian, Balasubramanian ; Tran, Dat Q. ; Kirste, Lutz ; Straňák, Patrik ; Graff, Andreas ; Prescher, Mario ; Nair, Akash ; Raghuwanshi, Mohit ; Darakchieva, Vanya ^LU and Paskov, Plamen P. , et al. (2024) In Applied Physics Letters 124(18).
- Contribution to journal › Article
Mark Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
Armakavicius, Nerijus ; Knight, Sean ; Kühne, Philipp ; Stanishev, Vallery ; Tran, Dat Q. ; Richter, Steffen ^LU ; Papamichail, Alexis ; Stokey, Megan ; Sorensen, Preston and Kilic, Ufuk , et al. (2024) In APL Materials 12(2).
- Contribution to journal › Article
2023
Mark On the thermal conductivity anisotropy in wurtzite GaN
Tran, Dat Q. ; Paskova, Tania ; Darakchieva, Vanya ^LU and Paskov, Plamen P. (2023) In AIP Advances 13(9).
- Contribution to journal › Article
Mark Thermal conductivity of Sc_xAl_1−xN and Y_xAl_1−xN alloys
Tran, Dat Q. ; Tasnádi, Ferenc ; Žukauskaitė, Agnė ; Birch, Jens ; Darakchieva, Vanya ^LU and Paskov, Plamen P. (2023) In Applied Physics Letters 122(18).
- Contribution to journal › Article
Mark High-quality N-polar GaN optimization by multi-step temperature growth process
Zhang, Hengfang ; Chen Jr., Tai ; Papamichail, Alexis ; Persson, Ingemar ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Journal of Crystal Growth 603.
- Contribution to journal › Article
Mark Low Al-content n-type Al_xGa_1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
Stanishev, Vallery ; Armakavicius, Nerijus ; Gogova, Daniela ; Nawaz, Muhammad ; Rorsman, Niklas ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Vacuum 217.
- Contribution to journal › Article
Mark Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
Zhang, Hengfang ; Persson, Ingemar ; Chen Jr., Tai ; Papamichail, Alexis ; Tran, Dat Q. ; Persson, Per O. Å. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Crystal Growth and Design 23(2). p.1049-1056
- Contribution to journal › Article
Mark Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in Al_xGa_1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
Knight, Sean ^LU ; Richter, Steffen ^LU ; Papamichail, Alexis ; Kühne, Philipp ; Armakavicius, Nerijus ; Guo, Shiqi ; Persson, Axel R. ; Stanishev, Vallery ; Rindert, Viktor ^LU and Persson, Per O.Å. , et al. (2023) In Journal of Applied Physics 134(18).
- Contribution to journal › Article
2022
Mark Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN : Understanding Nucleation and Design of Growth Strategies
Delgado Carrascon, Rosalia ; Richter, Steffen ^LU ; Nawaz, Muhammad ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2022) In Crystal Growth and Design 22(12). p.7021-7030
- Contribution to journal › Article

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