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- 2005
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Mark
Electrically active radiation-induced defects in Czochralski-grown Si with low carbon content
(
- Contribution to journal › Article
-
Mark
Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon
(
- Contribution to journal › Article
-
Mark
Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies
(
- Contribution to journal › Article
- 2003
-
Mark
Defect reactions associated with divacancy elimination in silicon
(
- Contribution to journal › Article
-
Mark
Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device
(
- Contribution to journal › Article
-
Mark
Vacancy-oxygen complex in Ge crystals
(
- Contribution to journal › Article
- 2002
-
Mark
Electronic properties of vacancy-oxygen complex in Ge crystals
(
- Contribution to journal › Article