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- 2012
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Mark
Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect
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- Contribution to journal › Article
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Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High-Performance InAs Nanowire MOSFETs
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- Contribution to journal › Article
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Mark
Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
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- Contribution to journal › Article
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Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
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- Contribution to journal › Article
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Mark
Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
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- Contribution to journal › Article
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Mark
Simultaneous growth mechanisms for Cu-seeded InP nanowires
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- Contribution to journal › Article
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Mark
Combinatorial Approaches to Understanding Polytypism in III-V Nanowires.
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- Contribution to journal › Article
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Mark
Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy
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- Contribution to journal › Article
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Mark
Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
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- Contribution to journal › Article