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- 2023
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Mark
Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators
2023) In Advanced Intelligent Systems(
- Contribution to journal › Article
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Mark
Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor Performance
(
- Contribution to journal › Article
- 2022
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Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
(
- Contribution to journal › Article
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Mark
Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
(
- Contribution to journal › Article
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Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
(
- Contribution to journal › Article
- 2021
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Mark
Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
(
- Contribution to journal › Article
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Mark
Improved quality of InSb-on-insulator microstructures by flash annealing into melt
(
- Contribution to journal › Article
- 2020
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Mark
Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
(
- Contribution to journal › Article
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Mark
A method for estimating defects in ferroelectric thin film MOSCAPs
(
- Contribution to journal › Article