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- 2002
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Mark
Electronic structure of nanometer-scale GaAs whiskers
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- Contribution to journal › Article
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Single-electron tunneling effects in a metallic double dot device
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- Contribution to journal › Article
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Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings
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- Contribution to journal › Article
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Diode and transistor behaviors of three-terminal ballistic junctions
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- Contribution to journal › Article
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Mark
Oxidation and reduction behavior of Ge/Si islands
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- Contribution to journal › Article
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Mark
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
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- Contribution to journal › Article
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One-dimensional heterostructures in semiconductor nanowhiskers
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- Contribution to journal › Article
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Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111))
2002) 6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors 20(1). p.226-229(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Electron ratchet effect in semiconductor devices and artificial materials with broken centrosymmetry
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- Contribution to journal › Article
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Photon mapping of quantum dots using a scanning tunneling microscope
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- Contribution to journal › Article