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- 2002
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Mark
Electronic properties of vacancy-oxygen complex in Ge crystals
(
- Contribution to journal › Article
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Mark
Calculations of the electronic structure of strained InAs quantum dots in InP
(
- Contribution to journal › Article
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Mark
Nanowire resonant tunneling diodes
(
- Contribution to journal › Article
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Mark
Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
(
- Contribution to journal › Article
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Mark
Three-dimensional integrated resonant tunneling transistor with multiple peaks
(
- Contribution to journal › Article
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Mark
Nanoscale tungsten aerosol particles embedded in GaAs
(
- Contribution to journal › Article
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Mark
Carrier dynamics around nano-scale Schottky contacts: a femtosecond near-field study
(
- Contribution to journal › Article
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Mark
Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
(
- Contribution to journal › Article
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Mark
Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
(
- Contribution to journal › Article
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Mark
Determination of hyperfine-induced transition rates from observations of a planetary nebula
(
- Contribution to journal › Article