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- 2022
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Mark
Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
(
- Contribution to journal › Article
- 2021
-
Mark
Optimization of Near-Surface Quantum Well Processing
(
- Contribution to journal › Article
-
Mark
Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
(
- Contribution to journal › Article
- 2020
-
Mark
Mobility of near surface MOVPE grown InGaAs/InP quantum wells
(
- Contribution to journal › Article
- 2019
-
Mark
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
(
- Contribution to journal › Article
-
Mark
Transition to the quantum hall regime in InAs nanowire cross-junctions
(
- Contribution to journal › Article
-
Mark
Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Integration of InSb on Si by Rapid Melt Growth
2019) 21th International Vacuum Congress(
- Contribution to conference › Abstract
- 2017
-
Mark
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
(
- Contribution to journal › Article
-
Mark
Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon
(
- Contribution to journal › Article