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- 2008
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Mark
A sequential logic device realized by integration of in-plane gate transistors in InGaAs/InP
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- Contribution to journal › Article
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Mark
Visualizations of transition dipoles, charge transfer, and electron-hole coherence on electronic state transitions between excited states for two-photon absorption.
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- Contribution to journal › Article
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Mark
Selective etching of III-V nanowires for molecular junctions
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- Contribution to journal › Article
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Mark
Spin current diode based on an electron waveguide with spin-orbit interaction
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- Contribution to journal › Article
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Mark
Single gold-nanoparticle-enhanced Raman scattering of individual single-walled carbon nanotubes via atomic force microscope manipulation
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- Contribution to journal › Article
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Mark
Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors
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- Contribution to journal › Article
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Mark
InAs nanowire metal-oxide-semiconductor capacitors
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- Contribution to journal › Article
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Mark
A highly tunable lateral quantum dot realized in InGaAs/InP by an etching technique
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- Contribution to journal › Article
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Mark
Quantized dynamics of a coherent capacitor
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- Contribution to journal › Article
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Mark
Diffusion Dynamics of Motor-Driven Transport: Gradient Production and Self-Organization of Surfaces.
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- Contribution to journal › Article