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- 2008
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Mark
Lande-like formula for the g factors of hole-nanowire subband edges
(
- Contribution to journal › Article
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Mark
Imaging a one-electron InAs quantum dot in an InAs/InP nanowire
(
- Contribution to journal › Article
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Mark
Optical properties of rotationally twinned InP nanowire heterostructures
(
- Contribution to journal › Article
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Mark
Development of a Vertical Wrap-Gated InAs FET
(
- Contribution to journal › Article
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Mark
A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP
(
- Contribution to journal › Article
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Mark
Band structure of core-shell semiconductor nanowires
(
- Contribution to journal › Article
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Mark
A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.
(
- Contribution to journal › Article
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Mark
Chip Based Electroanalytical Systems for Cell Analysis
(
- Contribution to journal › Scientific review
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Mark
Control of GaP and GaAs Nanowire Morphology through Particle and Substrate Chemical Modification.
(
- Contribution to journal › Article
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Mark
PHYS 287-Self-assembling semiconductor nanowires for applications in electronics and photonics
2008) 235th American-Chemical-Society National Meeting In Abstracts of Papers of the American Chemical Society 235. p.287-287(
- Contribution to journal › Published meeting abstract