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- 2023
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Mark
Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
(
- Contribution to journal › Article
- 2021
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Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(
- Contribution to journal › Article
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Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
(
- Contribution to journal › Article
- 2020
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Mark
Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studies
(
- Contribution to journal › Article
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Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
(
- Contribution to journal › Article
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Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
- 2019
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Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article
- 2018
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Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
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- Contribution to journal › Article
- 2017
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Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
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Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
- 2016
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Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
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- Contribution to journal › Article
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Mark
Ballistic modeling of InAs nanowire transistors
(
- Contribution to journal › Article
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Mark
Amplifier Design Using Vertical InAs Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
(
- Contribution to journal › Letter
- 2014
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Mark
High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
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Mark
InAs nanowire MOSFET differential active mixer on Si-substrate
(
- Contribution to journal › Article
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Mark
Intrinsic Performance of InAs Nanowire Capacitors
(
- Contribution to journal › Article
- 2013
-
Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
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Mark
A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
(
- Contribution to journal › Article
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Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
1/f-noise in Vertical InAs Nanowire Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
(
- Contribution to journal › Article
- 2012
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
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Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Performance Evaluation of III–V Nanowire Transistors
(
- Contribution to journal › Article
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Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
(
- Contribution to journal › Article
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Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
2012) GigaHertz Symposium 2012(
- Contribution to conference › Paper, not in proceeding
-
Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353(
- Contribution to journal › Article
- 2011
-
Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article
-
Mark
Design of RF Properties for Vertical Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
Low-frequency noise in vertical InAs nanowire FETs
(
- Contribution to journal › Article
-
Mark
Modelling and optimization of III/V transistors with matrices of nanowires
(
- Contribution to journal › Article
- 2009
-
Mark
Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
(
- Contribution to journal › Article
- 2007
-
Mark
Nanowire field-effect transistor
(
- Contribution to journal › Article
- 2005
-
Mark
Wrap-gated InAs nanowire field-effect transistor
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs epitaxial lateral overgrowth of W masks
(
- Contribution to journal › Article