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- 2023
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Mark
Time evolution of surface species during the ALD of high-k oxide on InAs
(
- Contribution to journal › Article
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Mark
Low temperature atomic hydrogen annealing of InGaAs MOSFETs
(
- Contribution to journal › Article
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Mark
8-band k · p modeling of strained InxGa(1-x)As/InP heterostructure nanowires
(
- Contribution to journal › Article
- 2022
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Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
(
- Contribution to journal › Article
- 2021
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Mark
Optimization of Near-Surface Quantum Well Processing
(
- Contribution to journal › Article
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Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(
- Contribution to journal › Article
- 2020
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Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
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Mark
Mobility of near surface MOVPE grown InGaAs/InP quantum wells
(
- Contribution to journal › Article
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Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
(
- Contribution to journal › Article
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Mark
Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices
(
- Contribution to journal › Article
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Mark
Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studies
(
- Contribution to journal › Article
- 2019
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Mark
Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
(
- Contribution to journal › Article
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Mark
Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) In Microelectronic Engineering(
- Contribution to journal › Article
- 2018
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Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
(
- Contribution to journal › Article
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Mark
Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
- 2017
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Mark
Impact of doping and diameter on the electrical properties of GaSb nanowires
(
- Contribution to journal › Article
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Mark
1/f and RTS noise in InGaAs nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55(
- Contribution to journal › Article
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Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
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Mark
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
InGaAs tri-gate MOSFETs with record on-current
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding