1 – 5 of 5
- show: 250
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2019
- Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs (
- Core-shell tfet developments and tfet limitations (
- 2016
- InAs nanowire GAA n-MOSFETs with 12-15 nm diameter (
- 2014
- High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations (
- 2013
- InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces (