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- 2011
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Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(
- Contribution to journal › Article
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Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
(
- Contribution to journal › Article
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Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
(
- Contribution to journal › Article
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding