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- 2024
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Mark
High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
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- Contribution to journal › Article
- 2023
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Mark
Bottom-Up Growth of Monolayer Honeycomb SiC
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- Contribution to journal › Article
- 2019
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Mark
Origin of the π -band replicas in the electronic structure of graphene grown on 4H -SiC(0001)
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- Contribution to journal › Article
- 2017
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Mark
Metal-dielectric transition in Sn-intercalated graphene on SiC(0001)
(
- Contribution to journal › Article
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Mark
Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC
(
- Contribution to journal › Article