LUP Statistics
Record
- Title
- Vertical, High-Performance 12 nm diameter InAs Nanowire MOSFETs on Si using an all III-V CMOS process
- Type
- Contribution to Conference
- Publ. year
- 2018
- Author/s
- Jönsson, Adam; Svensson, Johannes; Wernersson, Lars-Erik
- Department/s
- Nano Electronics
- In LUP since
- 2019-02-19
Downloads
| Total | This Year | This Month |
| 102 | 3 | 0 |
Sweden  |
17 (17%) |
Germany  |
13 (13%) |
United States of America  |
13 (13%) |
Czechia  |
8 (8%) |
China  |
7 (7%) |
France  |
6 (6%) |
Russian Federation  |
5 (5%) |
Malaysia  |
4 (4%) |
Hong Kong (China)  |
4 (4%) |
Singapore  |
4 (4%) |
Turkiye  |
2 (2%) |
Unknown  |
2 (2%) |
Switzerland  |
2 (2%) |
United Kingdom of Great Britain and Northern Ireland  |
2 (2%) |
Japan  |
2 (2%) |
Taiwan (China)  |
2 (2%) |
India  |
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Netherlands (Kingdom of the)  |
2 (2%) |
Belgium  |
1 (1%) |
South Korea  |
1 (1%) |
Senegal  |
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Ireland  |
1 (1%) |